SM6T100AHE35B中文资料威世科技数据手册PDF规格书

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• 600 W peak pulse power capability with a 10/1000 µs waveform

• Available in uni-directional and bi-directional

• Excellent clamping capability

• Low inductance

• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

• Solder dip 260 °C, 40 s

• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

TYPICAL APPLICATIONS

    Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive and telecommunication.