N-Channel Enhancement Mode MOSFET

文件：256.829 Kbytes 页数：11 Pages

SINOPWER

大中集成电路

N-Channel Enhancement Mode MOSFET

文件：256.829 Kbytes 页数：11 Pages

SINOPWER

大中集成电路

N-Channel Enhancement Mode MOSFET

文件：256.829 Kbytes 页数：11 Pages

SINOPWER

大中集成电路

Surface-Mount PAR® Transient Voltage Suppressors

FEATURES • Very low profile - typical height of 0.95 mm • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 185 °C capability suitable for high reliability and automotive requirement • Ideal for automated placement • Unidirectional only • Excellent cl

文件：112.34 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司