N-Channel Enhancement Mode MOSFET

文件：200.9 Kbytes 页数：11 Pages

SINOPWER

大中集成电路

N-Channel Enhancement Mode MOSFET

文件：200.9 Kbytes 页数：11 Pages

SINOPWER

大中集成电路

Surface-Mount TRANSZORB® Transient Voltage Suppressors

FEATURES • Very low profile - typical height of 0.95 mm • Ideal for automated placement • Unidirectional only • Excellent clamping capability • Peak pulse power: - 600 W (10/1000 μs) - 4 kW (8/20 μs) • ESD capability: IEC 61000-4-2 level 4 - 15 kV (air) - 8 kV (contact) • Meets MSL leve

文件：132.84 Kbytes 页数：6 Pages

VishayVishay Siliconix

威世威世科技公司

600 W TVS in SMA Flat

Features • Peak pulse power: 600 W (10/1000 μs) and 4 kW (8/20 μs) • Flat and thin package: 1 mm • Stand-off voltage range from 5 V to 188 V • Unidirectional type • Low leakage current: 0.2 μA at 25 °C and 1 μA at 85 °C • Operating Tj max: 175 °C • High power capability at Tj max.: up to 40

文件：663.52 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体