SM5335

Over-Voltage Protection IC with Low RDS_ON 29mΩ

Features ▪Over-VoltageProtectionupto29VDC ▪AVerylowRDS_ON29mΩ(typ.)n-ChannelMOSFET ▪AdjustableOVPThresholdfrom4Vto23V ▪Default6.8VfixedOVPThreshold ▪VBUSInputVoltageRange.VBUS:3.7V~28V ▪4.5AMaxContinuousCurrentCapability ▪OTGFunctionalityonVBUSPa

SM5335

Over-Voltage Protection IC with Low RDS_ON 29 mΩ; • Over-Voltage Protection up to 29 V DC\n• A Very Low RDS_ON 29 mΩ (typ.) n-Channel MOSFET\n• Adjustable OVP Threshold from 4 V to 23 V\n• Default 6.8 V Fixed OVP Threshold\n• VBUS Input Voltage Range\n• VBUS: 3.7 V to 28 V\n• 4.5 A Max Continuous Current Capability\n• OTG Functionality on VBUS Path\n• Active-low Switch Status Indicator Output\n• 0.4 mm Pitch, 9-Bump WLCSP\n;

The SM5335 Over-Voltage Protection device features a very low RDS_ON resistance,29 mΩ (typ.) and internal nFET for USB VBUS line. The nFET switch ensures safe and right current flow in both charging and host modes such as OTG while protecting the internal system circuits from any over voltage condition at VBUSIN pin. The device also features an adjustable over-voltage threshold with a resistor divided network. When the VBUS voltage exceeds the overvoltage protection threshold, the internal nFET is turned off to prevent any damage to downstream components and in enhancing overall system robustness. The device operates over a -40°C to +85°C ambient temperature range. The SM5335 is available in a 9-bump, 1.15 mm x 1.15 mm, WLCSP package.\n

SM5335

过电压保护;

ETC

SMB5335A

SurfaceMountSiliconZenerDiodes

SMB5335B

SMBKPlastic-EncapsulateDiodes

SMB5335B

SURFACEMOUNTSILICONZENERDIODES

Features ●Lowleakagecurrent ●Highreliability ●Highpeakreversepowerdissipation ●CompleteVoltageRange3.3to200Volts