THN4301U

SiGeNPNTransistor

□Features oLowNoiseFigure NF=1.5dBatf=2GHz,VCE=3V,IC=5mA NF=1.7dBatf=2GHz,VCE=1V,IC=3mA oHighGain MAG=12.3dBatf=2GHz,VCE=3V,IC=25mA MAG=12.0dBatf=2GHz,VCE=1V,IC=5mA oHighTransitionFrequency fT=15GHzat

THN4301Z

SiGeNPNTransistor

□Features oLowNoiseFigure NF=1.5dBatf=2GHz,VCE=3V,IC=5mA NF=1.7dBatf=2GHz,VCE=1V,IC=3mA oHighGain MAG=12.3dBatf=2GHz,VCE=3V,IC=25mA MAG=12.0dBatf=2GHz,VCE=1V,IC=5mA oHighTransitionFrequency fT=15GHzat

TP4301B

1.5Asynchronousmobilepowersolution

U4301

Preventdust,sandandwaterfromgettingintoswitches

U4301B

PCIExpress3.0AnalyzerModule

UD4301

N-ChandP-ChFastSwitchingMOSFETs

UM4301

SWITCHING/ATTENUATORPINDIODES

UM4301

PINDIODE

DESCRIPTION TheUM4300andUM7300seriescombineadiodechipofextremelythickintrinsicregionwithalowthermalresistanceconstruction.Thisresultsindiodesuniquelyapplicabletoverylowdistortionlinearattenuatorsandspecializedfunctions.TheUM4300series,withlargecross-section

UM4301

N-ChandP-ChFastSwitchingMOSFETs

GeneralDescription TheUM4301isthehighestperformancetrenchN-chandP-chMOSFETswithextremehighcelldensity,whichprovideexcellentRDSONandgatechargeformostofthesynchronousbuckconverterapplications. TheUM4301meettheRoHSandGreenProductrequirement,100EASguarant

UM4301

ProductChangeNotification