N-Channel Enhancement Mode MOSFET

文件：278.58 Kbytes 页数：11 Pages

SINOPWER

大中集成电路

LINEAR INTEGRATED CIRCUIT

FEATURES * Dual output: 3.3V/1A, 2.5V/1A. * Output voltage precision of ±2. * Output consists of PNP power transistor with low-dropout voltage. * Built-in over current protection circuit (OCP). * Built-in thermal shut down circuit (TSD). * Ideal for hard disk drives applications.

文件：158.6 Kbytes 页数：6 Pages

UTC

友顺

LINEAR INTEGRATED CIRCUIT

FEATURES * Dual output: 3.3V/1A, 2.5V/1A. * Output voltage precision of ±2. * Output consists of PNP power transistor with low-dropout voltage. * Built-in over current protection circuit (OCP). * Built-in thermal shut down circuit (TSD). * Ideal for hard disk drives applications.

文件：158.6 Kbytes 页数：6 Pages

UTC

友顺

.025 NPN Phototransistors

PRODUCT DESCRIPTION A small area high speed NPN silicon phototransistor mounted in a 3 mm diameter, lensed, end looking, transparent plastic package. These devices are spectrally and mechanically matched to the VTE337xLA series of IREDs.

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PERKINELMER