SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

FEATURES * Ideal for surface mount applications * Easy pick and place * Built-in strain relief * Low forward voltage drop

文件：3.70199 Mbytes 页数：2 Pages

TAYCHIPST

泰迪斯电子

SCHOTTKY DIODES REVERSE VOLT 20-100V FORWARD CURRENT 2A

DESCRIPTION The SM220 B~SM 2100 B are available in SMB p ackage FEATURES  For surface mount applications  Metal-Semiconductor Junction with Guarding  Epitaxial Construction  Metal-Semiconductor Junction with Guarding  Very Low forward voltage drop  High Current capability  For

文件：415.49 Kbytes 页数：5 Pages

AITSEMI

创瑞科技

Schottky Barrier Rectifiers Reverse Voltage 20 to100V Forward Current 2.0A

FEATURES * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Low power loss,high efficiency * For use in low voltage high frequency inverters, free wheeling,and polarity protection applications * Guardring for over voltage protection * High temperature soldering

文件：300.82 Kbytes 页数：9 Pages

LRC

乐山无线电

Voltage 20 ~ 100 V 2.0 Amp Schottky Barrier Rectifiers

FEATURES ● Low forward surge current ● Ideal for surface mounted applications ● Low leakage current

文件：306.56 Kbytes 页数：2 Pages

SECOS

喜可士

2.0 AMP LOW VF SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

FEATURES * Ideal for surface mount applications * Easy pick and place * Built-in strain relief * Low forward voltage drop

文件：68 Kbytes 页数：2 Pages

GWSEMI

唯圣电子

2.0 Amp Surface Mount Schottky Barrier Rectifiers

FEATURES • Batch process design, excellent power dissipation offers.better reverse leakage current and thermal resistance. • Low profile surface mounted application.in order to optimize board space. • Low power loss and low forward voltage drop • High surge, high current capability, and high e

文件：154.81 Kbytes 页数：2 Pages

SECOS

喜可士

P-Channel Enhancement Mode MOSFET

文件：254.37 Kbytes 页数：11 Pages

SINOPWER

大中集成电路

P-Channel Enhancement Mode MOSFET

文件：254.37 Kbytes 页数：11 Pages

SINOPWER

大中集成电路

Dual N-Channel Enhancement Mode MOSFET

文件：253.33 Kbytes 页数：11 Pages

SINOPWER

大中集成电路

Dual N-Channel Enhancement Mode MOSFET

文件：253.33 Kbytes 页数：11 Pages

SINOPWER

大中集成电路