TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

VOLTAGE RANGE - 20 to 60 Volts CURRENT - 2.0 Amperes FEATURES * Ideal for surface mounted applications * Low leakage current for high efficiency * High current capability

文件：420.18 Kbytes 页数：2 Pages

DCCOM

道全

2.0A 60V Schottky diode

文件：431.257 Kbytes 页数：2 Pages

SUNMATE

森美特

PDF上传者：深圳冠荣电子有限公司

Surface Mount Devices

文件：1.13492 Mbytes 页数：3 Pages

SPSEMI

瞬雷电子

Schottky 

Sunmate

森美特

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch

文件：439.88 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Low On-Resistance • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters, High Speed Switching

文件：476.26 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Low On-Resistance • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters, High Speed Switching

文件：476.05 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch

文件：450.81 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N- and P-Channel 20V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

文件：597.35 Kbytes 页数：10 Pages

VBSEMI

微碧半导体

N-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Low On-Resistance • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters, High Speed Switching

文件：486.88 Kbytes 页数：9 Pages

VBSEMI

微碧半导体