2.0 Amp Surface Mount Schottky Barrier Rectifiers

FEATURES • Batch process design, excellent power dissipation offers.better reverse leakage current and thermal resistance. • Low profile surface mounted application.in order to optimize board space. • Low power loss and low forward voltage drop • High surge, high current capability, and high e

文件：154.81 Kbytes 页数：2 Pages

SECOS

喜可士

N-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Low On-Resistance • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters, High Speed Switching

文件：475.91 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Low On-Resistance • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters, High Speed Switching

文件：475.91 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch

文件：439.43 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N- and P-Channel 20V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

文件：607.58 Kbytes 页数：10 Pages

VBSEMI

微碧半导体

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch

文件：456.88 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

Dual N-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

文件：521.78 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel 60 V (D-S) MOSFET

FEATURES • TrenchFET® power MOSFET • 100 Rg and UIS tested

文件：397.73 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

N-Channel 100 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Low On-Resistance • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters, High Speed Switching

文件：458.56 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel 100 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Low On-Resistance • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters, High Speed Switching

文件：458.79 Kbytes 页数：9 Pages

VBSEMI

微碧半导体