N-Channel Enhancement Mode MOSFET

文件：272.92 Kbytes 页数：11 Pages

SINOPWER

大中集成电路

N-Channel Enhancement Mode MOSFET

文件：272.92 Kbytes 页数：11 Pages

SINOPWER

大中集成电路

N-Channel Enhancement Mode MOSFET

文件：271.49 Kbytes 页数：10 Pages

SINOPWER

大中集成电路

N-Channel 30-V (D-S) MOSFET

文件：996.88 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

N-Channel Enhancement Mode MOSFET

文件：271.49 Kbytes 页数：10 Pages

SINOPWER

大中集成电路

N-Channel 30-V (D-S) MOSFET

文件：964.34 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

N-Channel Enhancement Mode MOSFET

文件：157.56 Kbytes 页数：10 Pages

SINOPWER

大中集成电路

N-Channel Enhancement Mode MOSFET

文件：157.56 Kbytes 页数：10 Pages

SINOPWER

大中集成电路

0.68uH, 20%, 4.6mOhm, 17Amp Max. SMD Molded Inductor

0.033uH to 33.0uH, 20%,0.26mOhm to 310.0mOhm, 100.0Amp to 2.5Amp SMD Molded Inductor. • 7.30x6.80mm foot Print, 3.00mm Max. height SMD Power Inductor for high frequency application. Operating frequency up to 5MHz.• Inductance range from 0.033uH to 33.00uH. Custom values are welcomed.• High saturation current characteristics by distributed gapped metal dust core.• Ideal for portable d;

ITG

0.33uH, 20%, 3.5mOhm, 30Amp Max. SMD Molded Inductor

0.1uH to 10.0uH, 20%, 1.5mOhm to 105.0mOhm, 60.0Amp to 7.0Amp SMD Molded Inductor. • Molded inductor structure. No audio noise.\n• High saturation current realized by distributed gap metal dust core.\n• Low profile: 3.0 mm max. height.\n• Working frequency up to 3 MHz.\n• Ideal for DC/DC converters, PDA, notebook, and server applications.\n• T&R quantity: 1000 pieces per reel.\n• ;

ITG