N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件：487.29 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

文件：484.8 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

文件：495.27 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件：487.21 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

FEATURES · Plastic package has Underwriters Laboratory Flammability Classification 94V-O · For surfacemounted applications · Glass passivated junction · Lowinductance surge resistance · Fast response time:typical less than 1.0ps from 0 voltstoV(BR) for unidirectional AND 5.0ns for bidir

文件：67.78 Kbytes 页数：4 Pages

MIC

昌福电子

Board-to-wire

Features Compact design 2.0 mm pitch is realized miniaturization and low profile as the connector for automobile. Terminal construction Female terminal is designed for simple box structure by having spring structure on male terminal.

文件：330.34 Kbytes 页数：8 Pages

JST

JST集团

2.0 Amp Surface Mount Schottky Barrier Rectifiers

FEATURES ● Schottky barrier rectifier ● Guardring protection ● Low forward voltage ● Reverse energy tested ● High current capability ● Extremely low thermal resistance

文件：362.76 Kbytes 页数：2 Pages

SECOS

喜可士

Transient Voltage Suppressor Diode Array

Transient Voltage Suppressor Diode Array SOT−23 Dual Common Anode Diodes for ESD Protection These dual monolithic silicon TVS diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as com

文件：96.25 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

丝印：05M；Package：SOT-23；SOT−23 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration

Specification Features: • SOT−23 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration • Working Peak Reverse Voltage Range − 5.0 V t o 36 V • Peak Power − 300 Watt (8/20 s) • Low Leakage − 1.0A • Flammability Rating UL 94 V−0 • The

文件：341.13 Kbytes 页数：5 Pages

UMW

友台半导体

丝印：05M；Package：SOT-23；SOT−23 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration

Specification Features: SOT−23 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration Working Peak Reverse Voltage Range − 5.0 V t o 36 V Peak Power − 300 Watt (8/20 s) Low Leakage − 1.0A Flammability Rating UL 94 V−0 These are Pb−Free Dev

文件：341.13 Kbytes 页数：5 Pages

UMW

友台半导体