UNI-AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS

文件：759.39 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

Surface Mount TRANSZORB® Transient Voltage Suppressors

FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 μs     waveform, repetitive rate (duty cycle): 0.01 • Excellent clamping capability • Low i

文件：112.79 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Surface Mount TRANSZORB Transient Voltage Suppressors

FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 μs waveform • Excellent clamping capability • Low inductance • Meets MSL level 1, per J-STD-

文件：93.11 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Surface Mount TRANSZORB® Transient Voltage Suppressors

FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in unidirectional and bidirectional • 1500 W peak pulse power capability with a 10/1000 μs waveform • Excellent clamping capability • Low inductance • Meets MSL level 1, per J-STD-0

文件：109.22 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

VOLTAGE-6.8 TO 220 Volts 1500 Watt Peak Pulse Power FEATURES • For surface mounted applications in order to optimize board space • Low profile package • Built-in strain relief • Glass passivated junction • Low inductance • Excellent clamping capability • Repetition Ra

文件：157.08 Kbytes 页数：3 Pages

MDE

TRANSZORB??SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

FEATURES ♦ For surface mounted applications in order to optimize board space ♦ Low profile package ♦ Built-in strain relief ♦ Glass passivated junction ♦ Low inductance ♦ Excellent clamping capability ♦ Repetition Rate (duty cycle): 0.05 ♦ Fast reponse time: typically less than 1ps from 0

文件：73.32 Kbytes 页数：3 Pages

GE

TRANSILTM

DESCRIPTION Transil diodes provide high overvoltage protection by clamping action. Their instantaneous response to transient overvoltages makes them particularly suited to protect voltage sensitive devices such as MOS Technology and low voltage supplied IC’s. FEATURES ■ PEAK PULSE POWER : 1500

文件：189.24 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

TransilTM

Description Transil diodes provide high overvoltage protection by clamping action. Their instantaneous response to transient overvoltages makes them particularly suited to protect voltage sensitive devices such as MOS Technology and low voltage supplied IC’s. Features ■ Peak pulse power

文件：125.63 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

Transil

DESCRIPTION Transil diodes provide high overvoltage protection by clamping action. Their instantaneous response to transient overvoltages makes them particularly suited to protect voltage sensitive devices such as MOS Technology and low voltage supplied IC’s. FEATURES ■ PEAK PULSE POWER : 1500

文件：122.55 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

Transil

DESCRIPTION Transil diodes provide high overvoltage protection by clamping action. Their instantaneous response to transient overvoltages makes them particularly suited to protect voltage sensitive devices such as MOS Technology and low voltage supplied IC’s. FEATURES ■ PEAK PULSE POWER : 1500

文件：122.55 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体