Transient Voltage Suppressor Diode Array

Transient Voltage Suppressor Diode Array SOT−23 Dual Common Anode Diodes for ESD Protection These dual monolithic silicon TVS diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as com

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ONSEMI

安森美半导体

丝印：05M；Package：SOT-23；SOT−23 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration

Specification Features: • SOT−23 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration • Working Peak Reverse Voltage Range − 5.0 V t o 36 V • Peak Power − 300 Watt (8/20 s) • Low Leakage − 1.0A • Flammability Rating UL 94 V−0 • The

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UMW

友台半导体

丝印：05M；Package：SOT-23；SOT−23 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration

Specification Features: SOT−23 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration Working Peak Reverse Voltage Range − 5.0 V t o 36 V Peak Power − 300 Watt (8/20 s) Low Leakage − 1.0A Flammability Rating UL 94 V−0 These are Pb−Free Dev

文件：341.13 Kbytes 页数：5 Pages

UMW

友台半导体

Transient Voltage Suppressor Diode Array

文件：109.95 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

TVS Diode Array

Features Transient protection for high speed data lines to IEC 61000-4-2 (ESD) + 30kV (air), + 30KV (contact) IEC 61000-4-4 (EFT) 40A (5/50ns) Working voltages : 5V Protects one bidirectional line or two unidirectional lines Low operating and clamping voltages Solid-state silicon avalanche

文件：977.34 Kbytes 页数：4 Pages

TECHPUBLIC

台舟电子

ESD静电二极管

Plingsemic

鹏领半导体

静电和浪涌保护

JGSEMI

台湾金锆

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HXY MOSFET

华轩阳电子

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：电路保护 TVS - 二极管 描述：TVS DIODE 5VWM 9.8VC SOT23-3

ONSEMI

安森美半导体