SLG59H1020V集成电路（IC）的配电开关负载驱动器规格书PDF中文资料

厂商型号	SLG59H1020V
参数属性	SLG59H1020V 封装/外壳为18-PowerUFQFN；包装为卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带；类别为集成电路（IC）的配电开关负载驱动器；产品描述：IC PWR SWITCH N-CHAN 1:1 18STQFN
功能描述	A 20 V, 50 mΩ, 3 A, Reverse Blocking Load Switch with VIN Lockout Select and MOSFET Current Monitor Output
封装外壳	18-PowerUFQFN
文件大小	2.53176 Mbytes
页面数量	44 页
生产厂商	RENESAS
中文名称	瑞萨
网址	网址
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-10-8 13:26:00
人工找货	SLG59H1020V价格和库存，欢迎联系客服免费人工找货

General Description

The SLG59H1020V is a high-performance, self-powered

50 mΩ NMOS load switch with back-to-back reverse-current

blocking designed for all 4.5 V to 20 V power rails up to 3 A.

Using a proprietary MOSFET design, the SLG59H1020V

achieves a stable 50 mΩ RDSON across a wide input voltage

range. In combining novel FET design and copper pillar

interconnects, the SLG59H1020V package also exhibits a low

thermal resistance for high-current operation.

Designed to operate over a -40°C to 85°C range, the

SLG59H1020V is available in a low thermal resistance,

RoHS-compliant, 1.6 x 3.0 mm STQFN package.

特性 Features

• Wide Operating Input Voltage: 4.5 V to 20 V

• Maximum Continuous Current: 3 A

• Automatic nFET SOA Protection

• 5 W SOA Protection Threshold

• Back-to-Back FET Reverse Current Blocking, when OFF

• Internal nFET Power Limiting

• High-performance MOSFET Switch

Low RDSON: 50 mΩ at VIN = 20 V

Low ΔRDSON/ΔVIN: < 0.05 mΩ/V

Low ΔRDSON/ΔT: < 0.06 mΩ/°C

• 4-Level, Pin-selectable VIN Overvoltage Lockout

• Capacitor-adjustable Inrush Current Control

• Two stage Current Limit Protection:

Resistor-adjustable Active Current Limit

Internal Short-circuit Current limit

• Open Drain FAULT Signaling

• MOSFET Current Analog Output Monitor: 10 µA/A

• Pb-Free / Halogen-Free / RoHS Compliant Packaging