SLE24C02-DSLASHP中文资料西门子数据手册PDF规格书

特性 Features

• Data EEPROM internally organized as 128/256 bytes and 16/32 pages × 8 bytes

• Page protection mode, flexible page-by-page hardware write protection

– Additional protection EEPROM of 16/32 bits, 1 bit per data page

– Protection setting for each data page by writing its protection bit

– Protection management without switching WP pin

• Low power CMOS

• VCC = 2.7 to 5.5 V operation

• Two wire serial interface bus, I2C-Bus compatible

• Filtered inputs for noise suppression with Schmitt trigger

• Clock frequency up to 400 kHz

• High programming flexibility

– Internal programming voltage

– Self timed programming cycle including erase

– Byte-write and page-write programming, between 1 and 8 bytes

– Typical programming time 5 ms for up to 8 bytes

• High reliability

– Endurance 106 cycles1)

– Data retention 40 years1)

– ESD protection 4000 V on all pins

• 8 pin DIP/DSO packages

• Available for extended temperature ranges

– Industrial: − 40 °C to + 85 °C

– Automotive: − 40 °C to + 125 °C