High speed, high integration gate array

DESCRIPTION The SLA9000F series is a SOG type CMOS gate which has realized high speed, high integration and high driving capability. This series is offered with 2,784 to 44,070 gates to ensure an optimum application for any mid size high speed systems. This series is designed to operate on both

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EPSON

爱普生

SLA9000F Series High speed, high integration gate array

■ DESCRIPTION\nThe SLA9000F series is a SOG type CMOS gate which has realized high speed, high integration and high driving capability. This series is offered with 2,784 to 44,070 gates to ensure an optimum application for any mid size high speed systems.\nThis series is designed to operate on both ● Super-high density (adopting 1.0µm silicon gate CMOS with 2-metal layer)\n● High-speed operation (operation delay of internal gate = 0.3ns at 5.0V, 2-input Power NAND standard)\n● Simplified level shifter cells available\n● Output drivability (IOL = 0.1, 2, 6, 12, 24 mA when 5.0V, IOL = 0.1, 1, 3,;

Epson

爱普生

Digital Control Compatible Synchronous-Buck Gate Driver With Current Sense and Fault Protection

FEATURES • Dual High Current Drivers. • Full Compatibility with TI Fusion Digital Power Supply Controllers, such as UCD91xx and UCD92xx Families • Operational to 2 MHz Switching Frequency • High-Side FET and Output Current Limit Protection with Independently Adjustable Thresholds • Fast H

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TI

德州仪器

Automotive Dual N-Channel 40 V (D-S) 175 째C MOSFET

文件：214.11 Kbytes 页数：7 Pages

VISHAYVishay Siliconix

威世威世科技公司

Automotive Dual N-Channel 40 V (D-S) 175 째C MOSFET

文件：267.7 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司