Dual 4-Input NAND Gate

Dual 4-Input NAND Gate High-Voltage Silicon-Gate CMOS The SL4012B NAND gates provide the system designer with direct emplementation of the NAND function. • Operating Voltage Range: 3.0 to 18 V • Maximum input current of 1 μA at 18 V over full package temperature range; 100 nA at 18 V and 25°

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SLS

Dual 4-input NAND gate. High-voltage silicon-gate CMOS.

SLS

290-MHz LOW-DISTORTION HIGH-SPEED AMPLIFIERS

文件：439.9 Kbytes 页数：30 Pages

TI

德州仪器

290-MHz LOW-DISTORTION HIGH-SPEED AMPLIFIERS

文件：439.9 Kbytes 页数：30 Pages

TI

德州仪器

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

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SUTEX