SKY67102-396LF数据手册RF/IF射频/中频RFID的射频放大器规格书PDF

描述 Description

The SKY67102-396LF is a GaAs, pHEMT Low-Noise Amplifier (LNA) with integrated active bias, high linearity (+34 dBm OIP3) and <1.0 dB Noise Figure at 2.6 GHz. The advanced GaAs pHEMT enhancement mode process also provides good return loss, high gain, unconditional stability and high reverse isolation.

The internal active bias circuitry provides stable performance over temperature and process variation. The device offers the user the ability to externally adjust supply current and gain. Supply voltage is applied to the RFOUT/VDD pin through an RF choke inductor. Pin 4 (VIN) should be connected RFOUT/VDD through an external resistor to control the supply current. Pin 5 (FEEDBACK) is connected through an RC network to externally adjust the gain of the device without affecting the Noise Figure (NF) of the LNA. In addition, the RFIN and RFOUT/VDD pins should be DC blocked to ensure proper operation.

The SKY67102-396LF is optimized for the frequency range of 2.3 to 3.0 GHz. For 0.4 to 1.2 GHz operation, the SKY67101-396LF should be used and for 1.2 to 2.2 GHz operation the pin-compatible SKY67100-396LF is recommended.

The LNA is manufactured in a compact, 2 x 2 mm, 8-pin Dual Flat No-Lead (DFN) Skyworks Green package.

特性 Features

• Ultra Low Noise Figure: 0.8 dB @ 2.6 GHz
• Input and output return loss > 18 dB @ 2.6 GHz
• High IIP3 performance: +16.7 dBm @ 2.6 GHz
• Adjustable supply current and gain
• Temperature and process-stable active bias
• Miniature DFN (8-pin, 2 x 2 mm) package (MSL1 @ 260 °C per JEDEC J-STD-020)

应用 Application

• Small Cells

简介

SKY67102-396LF属于RF/IF射频/中频RFID的射频放大器。由制造生产的SKY67102-396LF射频放大器在射频应用中，射频放大器产品可用于信号增益和缓冲。这些产品与通用运算放大器的不同之处在于，它们通常适用于更高的频率，更倾向于提供不可调节的固定增益，并且输入或输出阻抗值符合常用传输线特性阻抗。