SKY65050-372LF分立半导体产品的晶体管-FETMOSFET-射频规格书PDF中文资料

SKY65050-372LF属于分立半导体产品的晶体管-FETMOSFET-射频。由美国思佳讯公司制造生产的SKY65050-372LF晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。

Applications

• Wireless infrastructure: WLAN, WiMAX, broadband, cellular base stations

• Test instrumentation

• LNA for GPS receivers

• Satellite receivers

Features

• Externally matched for wideband operation

• Noise Figure = 0.45 dB @ 2.4 GHz of device only

• Noise Figure = 0.65 dB @ 2.4 GHz including matching network loss

• Gain = 15.5 dB @ 2.4 GHz

• OIP3 = +23.5 dBm @ 2.4 GHz, VDD = 3 V, IDD = 20 mA

• P1dB = +10.5 dBm @ 2.4 GHz, VDD = 3 V, IDD = 20 mA

• Adjustable supply current, 5 to 55 mA

• Small, SC-70 (4-pin, 2.20 x 1.35 x 1.10 mm) package (MSL1, 260 °C per JEDEC J-STD-020)

Description

The SKY65050-372LF is a high performance, n-channel low-noise transistor. The device is fabricated from Skyworks advanced depletion mode pHEMT process and is provided in a 2.20 x 1.35 x 1.10 mm, 4-pin SC-70 package. The transistor’s low Noise Figure (NF), high gain, and excellent 3rd Order Intercept Point (IP3) allow the device to be used in various receiver and transmitter applications. A functional block diagram is shown in Figure 1. The pin configuration and package are shown in Figure 2. Signal pin assignments and functional pin descriptions are provided in Table 1.