SKM75GB063D中文资料IGBT模块数据手册Semikron-DANFOSS规格书

特性 Features

• N channel, homogeneous Si-structure (NPT-Non punch-through IGBT)
• Low tail current with low temperature dependence
• High short circuit capability, self limiting if term. G is clamped to E
• Pos. temp.-coeff. of VCEsat
• Very low Cies, Coes, Cres
• Latch-up free
• Fast & soft inverse CAL diodes
• Isolated copper baseplate using DBC Direct Copper Bonding Technology without hard mould
• Large clearance (10 mm) and creepage distances (20 mm)

应用 Application

• Switching (not for linear use)
• Switched mode power supplies
• UPS
• Three phase inverters for servo / AC motor speed control
• Pulse frequencies also > 10kHz