SEMITRANS IGBT Modules New Range

SEMITRANS® IGBT Modules; New Range 1995/96 3rd Version: Low Inductance, lower VCEsat, soft and fast CAL diodes1); Preliminary Data 4)

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Semikron

赛米控丹佛斯

High Speed IGBT4 Modules

Features* • High speed trench and field-stop IGBT • CAL4 ultra-fast = soft switching 4. generation CAL-diode • Insulated copper baseplate using DBC technology (Direct Bonded Copper) • Increased power cycling capability • For higher switching frequencies above 15kHz • UL recognized, file n

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Semikron

赛米控丹佛斯

SEMITRANS® 2

Features • V-IGBT = 6. Generation Trench V-IGBT (Fuji) • CAL4 = Soft switching 4. Generation CAL-diode • Insulated copper baseplate using DBC technology (Direct Copper Bonding) • Increased power cycling capability • With integrated gate resistor • UL recognized, file no. E63532 • Lowest

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Semikron

赛米控丹佛斯

IGBT Modules

文件：703.34 Kbytes 页数：4 Pages

Semikron

赛米控丹佛斯

Fast IGBT4 Modules

文件：519.99 Kbytes 页数：5 Pages

Semikron

赛米控丹佛斯

Fast IGBT4 Modules

文件：464.53 Kbytes 页数：5 Pages

Semikron

赛米控丹佛斯

IGBT模块

• High speed trench and field-stop IGBT\n• CAL4 ultra-fast = soft switching 4. generation CAL-diode\n• Insulated copper baseplate using DBC technology (Direct Bonded Copper) \n• Increased power cycling capability\n• For higher switching frequencies above 15kHz\n• UL recognized, file no. E63532;

Semikron-DANFOSS

赛米控丹佛斯

IGBT模块

• IGBT4 = 4th generation fast trench IGBT (Infineon)\n• CAL4 = Soft switching 4th generation CAL-diode\n• Insulated copper baseplate using DBC technology (Direct Bonded Copper) \n• Increased power cycling capability\n• With integrated gate resistor\n• For higher switching frequencies up to 20kHz\n• ;

Semikron-DANFOSS

赛米控丹佛斯

IGBT模块

• V-IGBT = 6. Generation Trench V-IGBT (Fuji)\n• CAL4 = Soft switching 4. Generation CAL-diode\n• Insulated copper baseplate using DBC technology (Direct Bonded Copper) \n• Increased power cycling capability\n• With integrated gate resistor\n• UL recognized, file no. E63532\n• Lowest switching losse;

Semikron-DANFOSS

赛米控丹佛斯