Trench IGBT Modules

Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability, self limiting to 6 x Ic Typical Applications* • AC inverter drives mains 575 - 750 V AC • Public transport (auxiliary syst.)

文件：799.66 Kbytes 页数：6 Pages

SEMIKRON

赛米控丹佛斯

Trench IGBT Modules

文件：801.31 Kbytes 页数：6 Pages

SEMIKRON

赛米控丹佛斯

Trench IGBT Modules

文件：949.67 Kbytes 页数：6 Pages

SEMIKRON

赛米控丹佛斯

Trench IGBT Modules

Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability, self limiting to 6 x Ic Typical Applications* • AC inverter drives mains 575 - 750 V AC • Public transport (auxiliary syst.)

文件：697.58 Kbytes 页数：4 Pages

SEMIKRON

赛米控丹佛斯

Trench IGBT Modules

文件：801.31 Kbytes 页数：6 Pages

SEMIKRON

赛米控丹佛斯

Trench IGBT Modules

文件：949.67 Kbytes 页数：6 Pages

SEMIKRON

赛米控丹佛斯

IGBT模块

• Homogeneous Si \n• Trench = Trenchgate technology \n• VCE(sat) with positive temperature coefficient \n• High short circuit capability, self limiting to 6 x IC;

Semikron-DANFOSS

赛米控丹佛斯