IGBT Modules

Features • N channel, homogeneous Si • Very low tail current with low temperature dependence • High short circuit capability, self limiting to 6 * Icnom • Latch-up free • Fast & soft inverse CAL diodes • Isolated copper baseplate using DCB Direct Copper Bonding • Large clearance (10 mm)

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SEMIKRON

赛米控丹佛斯

SEMITRANS IGBT Modules New Range

SEMITRANS® IGBT Modules; New Range 1995/96 3rd Version: Low Inductance, lower VCEsat, soft and fast CAL diodes1); Preliminary Data 4)

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SEMIKRON

赛米控丹佛斯

西门康IGBT模块 SKM100GB173D

文件：580.828 Kbytes 页数：4 Pages

SEMIKRON

赛米控丹佛斯

PDF上传者：苏州银邦电子科技有限公司

IGBT Modules

文件：566.64 Kbytes 页数：4 Pages

SEMIKRON

赛米控丹佛斯

IGBT模块

• VCE(sat) with positive temperature coefficient\n• High short circuit capability, self limiting to 6 x Icnom \n• Fast & soft inverse CAL diodes \n• Large clearance (10 mm) and creepage distances (20 mm)\n• Insulated copper baseplate using DBC Technology (Direct Bonded Copper) \n• UL recognized, fil;

Semikron-DANFOSS

赛米控丹佛斯