SKM100GB063D中文资料赛米控丹佛斯数据手册PDF规格书

特性 Features

• N channel, homogeneous Silicon structure (NPT - Non punch through IGBT)

• Low tail current with low temperature dependence

• High short circuit capability, self limiting if term. G is clamped to E

• Pos. temp.-coeff. of VCEsat

• Very low Cies, Coes, Cres

• Latch-up free

• Fast & soft inverse CAL diodes

• isolated copper Bonding Technology without hard mould

• Large clearance (10 mm) and creepage distances (20 mmm)

Typical Applications

• Switching (not for linear use)

• Switched mode power supplies

• UPS

• Three phase inverters for servo / AC motor speed control

• Pulse frequencies also above 10 kHz