High Speed IGBT in NPT-technology

• 30 lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution

文件：348.75 Kbytes 页数：14 Pages

Infineon

英飞凌

High Speed IGBT in NPT-technology 30 lower Eoff compared to previous generation

文件：1.18748 Mbytes 页数：14 Pages

Infineon

英飞凌

High Speed IGBT in NPT-technology 30 lower Eoff compared to previous generation

文件：1.18748 Mbytes 页数：14 Pages

Infineon

英飞凌

分立式IGBT

Infineon provides a huge IGBT portfolio addressing Soft Switching/Resonant and Hard Switching Topologies. ·30% lower E off compared to previous generation\n ·Short circuit withstand time – 10μs\n ·Designed for operation above 30kHz\n ·High ruggedness, temperature stable behaviour\n ·Pb-free lead plating; RoHS compliant\n ·Qualified according to JEDEC for target applications;

Infineon

英飞凌