Symmetric Dual N-Channel 40 V (D-S) MOSFET

FEATURES • TrenchFET® Gen IV power MOSFET • 100 Rg and UIS tested • Symmetric dual N-channel • Flip chip technology optimal thermal design • High side and low side MOSFETs form optimized combination for 50 duty cycle • Material categorization: for definitions of compliance please see www

文件：166.74 Kbytes 页数：7 Pages

VishayVishay Siliconix

威世威世科技公司

Symmetric Dual N-Channel 40 V (D-S) MOSFET

• TrenchFET® Gen IV power MOSFET\n• 100 % Rg and UIS tested\n• Symmetric dual N-channel;

Vishay

威世

6.0AMP Surface Mount Schottky Barrier Rectifiers

FEATURES • Low forward voltage drop • High current capability • High reliability • High surge current capability • Epitaxial construction

文件：295.3 Kbytes 页数：2 Pages

SECOS

喜可士

Capacity (20-hour) 100Ah

文件：486.39 Kbytes 页数：1 Pages

GSYUASABATTERY

6 A Surface Mount Schottky Elektronische Bauelemente Barrier Rectifiers

文件：64.98 Kbytes 页数：1 Pages

SECOS

喜可士