订购数量 | 价格 |
---|---|
1+ |
SIZ300DT-T1-GE3_VISHAY/威世科技_MOSFET 30V 11A/28A 16.7/31W 24mohm/11mohm @ 10V科雨一部
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 型号:
SIZ300DT-T1-GE3
- 功能描述:
MOSFET 30V 11A/28A 16.7/31W 24mohm/11mohm @ 10V
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
相近型号
- SIZ340BDT-T1-GE3
- SIZ260DT-T1-GE3
- SIZ340DT
- SIZ256DT-T1-GE3
- SIZ340DTT1GE3
- SIZ254DT-T1-GE3
- SIZ340DT-T1-GE3
- SIZ250DT-T1-GE3
- SIZ340DT-T1-GE3-A
- SIZ240DT-T1-GE3
- SIZ340DT-T1-GE3IC
- SIZ240DT-T1
- SIZ200DT-T1-GE3
- SIZ200DT
- SIZ342ADT-T1-E3
- SIZ-011NST
- SIZ342ADT-T1-GE3
- SIZ-011NJT
- SIZ342DT
- SIZ-011LST
- SIZ342DTT1GE3
- SIZ-011KJT
- SIZ342DT-T1-GE3
- SIXP225AES
- SIZ342DT-T1-GE3-A
- SIXP225A
- SIZ342DT-T1-GE3IC
- SIZ342JT-T1-GE3
- SIXP220AES
- SIZ346DT-T1-GE3
- SIXP220A
- SIZ348DT-T1-GE3
- SIXP1110HE.B2SE001
- SIZ350DT-T1-GE3
- SIXP1110HE.B2SE000
- SIZ700DI-T1-GE3
- SIXP1110HE.B1QE001
- SIZ700DT
- SIXP1110HC.B2SE001
- SIZ700DT-T1
- SIXP1110HC.B2QE000
- SIZ700DT-T1-E3
- SIXP1110HA.B2SE001
- SIZ700DTT1GE3
- SIXP1110HA.B2SE000
- SIZ700DT-T1-GE3
- SIXP1110HA.B2QE000
- SIZ700DT-T1-GE3MOS()
- SIXP1110HA.B1SE001
- SIXP1110HA.B1SE000