| 订购数量 | 价格 |
|---|---|
| 1+ |
首页>SISA14DN-T1-GE3>芯片详情
SISA14DN-T1-GE3_VISHAY/威世_MOSFET 30V 5.1mOhm@10V 14.1A N-Ch G-IV诺美思科技
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 型号:
SISA14DN-T1-GE3
- 功能描述:
MOSFET 30V 5.1mOhm@10V 14.1A N-Ch G-IV
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
相近型号
- SISA13DN-T1-E3
- SISA18ADN
- SISA18ADN-T1-E3
- SISA12JN-T1-GE3
- SISA18ADNT1GE3
- SISA12DN-T1-GE3
- SISA18ADN-T1-GE3
- SISA12BDN-T1-GE3
- SISA18ADN-T1-GE3IC
- SISA12ADN-T1-GT3
- SISA18BDN-T1-GE3
- SISA12ADN-T1-GE3IC
- SISA18DN
- SISA12ADN-T1-GE3
- SISA18DNT1GE3
- SISA12ADNT1GE3
- SISA18DN-T1-GE3
- SISA12ADN-T1-E3
- SISA18DN-T1-GE3IC
- SISA12ADN
- SISA18JN-T1-GE3
- SISA10DP-T1-GE3
- SISA18JN-T1-GE3-A
- SISA18JN-T1-GE3IC
- SISA24DNT1GE3
- SISA24DN-T1-GE3
- SISA26DN-T1-GE3
- SISA34DN
- SISA10DN-T1-GE3IC
- SISA34DN-T1-E3
- SISA10DN-T1-GE3
- SISA34DNT1GE3
- SISA10DNT1GE3
- SISA34DN-T1-GE3
- SISA10DN-T1-E3
- SISA35DN-T1-GE3
- SISA10DN-T1
- SISA38ADN-T1-GE3
- SISA10DN
- SISA40DN-T1-GE3
- SISA10BDN-T1-GE3
- SISA66DN-T1-E3
- SISA66DN-T1-GE3
- SISA04DN-T1-GE3IC
- SISA72ADN-T1-GE3
- SISA04DN-T1-GE3
- SISA72DN-T1-E3
- SISA04DNT1GE3
- SISA72DNT1GE3
- SISA04DN-T1-E3



