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首页>SISA04DN-T1-GE3>芯片详情
SISA04DN-T1-GE3_VISHAY/威世_MOSFET 30V 2.15mOhm@10V 40A N-Ch G-IV诺美思科技
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产品属性
- 类型
描述
 - 型号:
SISA04DN-T1-GE3
 - 功能描述:
MOSFET 30V 2.15mOhm@10V 40A N-Ch G-IV
 - RoHS:
否
 - 制造商:
STMicroelectronics
 - 晶体管极性:
N-Channel
 - 汲极/源极击穿电压:
650 V
 - 闸/源击穿电压:
25 V
 - 漏极连续电流:
130 A 电阻汲极/源极
 - RDS(导通):
0.014 Ohms
 - 配置:
Single
 - 安装风格:
Through Hole
 - 封装/箱体:
Max247
 - 封装:
Tube
 
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