650V 3A SiC Schottky Diode

Features: Capable of high temperature operation >= 175°C High F requency Operation High S urge Current Capability No Reverse Recovery / No Forward Recovery Positive Temperature Coefficient

文件：1.85458 Mbytes 页数：3 Pages

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650V 6A SiC Schottky Diode

Features: Capable of high temperature operation >= 175°C High F requency Operation High S urge Current Capability No Reverse Recovery / No Forward Recovery Positive Temperature Coefficient

文件：1.94548 Mbytes 页数：3 Pages

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650V 8A SiC Schottky Diode

Features: Capable of high temperature operation >= 175°C High F requency Operation High S urge Current Capability No Reverse Recovery / No Forward Recovery Positive Temperature Coefficient

文件：947.17 Kbytes 页数：3 Pages

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650V 10A SiC Schottky Diode

Features: Capable of high temperature operation >= 175°C High F requency Operation High S urge Current Capability No Reverse Recovery / No Forward Recovery Positive Temperature Coefficient

文件：1.0671 Mbytes 页数：3 Pages

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650V 15A SiC Schottky Diode

Features: Capable of high temperature operation >= 175°C High F requency Operation High S urge Current Capability No Reverse Recovery / No Forward Recovery Positive Temperature Coefficient

文件：989.6 Kbytes 页数：3 Pages

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650V 20A SiC Schottky Diode

Features: Capable of high temperature operation >= 175°C High F requency Operation High S urge Current Capability No Reverse Recovery / No Forward Recovery Positive Temperature Coefficient

文件：989.82 Kbytes 页数：3 Pages

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650V 30A SiC Schottky Diode

Features: Capable of high temperature operation >= 175°C High F requency Operation High S urge Current Capability No Reverse Recovery / No Forward Recovery Positive Temperature Coefficient

文件：1.06059 Mbytes 页数：3 Pages

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650V 35A SiC Schottky Diode

Features: Capable of high temperature operation >= 175°C High Frequency Operation High Surge Current Capability No Reverse Recovery / No Forward Recovery Positive Temperature Coefficient

文件：1.06975 Mbytes 页数：3 Pages

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650V 50A SiC Schottky Diode

Features: Capable of high temperature operation >= 175°C High Frequency Operation High Surge Current Capability No Reverse Recovery / No Forward Recovery Positive Temperature Coefficient

文件：896.59 Kbytes 页数：3 Pages

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650V 8A SiC Schottky Rectifier Diode

650 Volt 8 Amp Silicon Carbide (SiC) Rectifier Diodes specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach. • Capable of high temperature operation >= 175°C\n• Positive Temperature Coefficient\n• No Reverse Recovery / No Forward Recovery\n;

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