订购数量 | 价格 |
---|---|
1+ |
SIR880ADP-T1-GE3_VISHAY/威世科技_MOSFET 80V 6.3mOhm@10V 60A N-Ch MV T-FET安富世纪一部
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 型号:
SIR880ADP-T1-GE3
- 功能描述:
MOSFET 80V 6.3mOhm@10V 60A N-Ch MV T-FET
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
相近型号
- SIR878DPT1GE3
- SIR880DPT1GE3
- SIR878DP-T1-E3
- SIR880DP-T1-GE3
- SIR878DP-T1
- SIR878DP
- SIR880DP-T1-RE3
- SIR878BDP-T1-RE3
- SIR880DY-T1-GE3
- SIR878BDP-T1-GE3
- SIR882ADP
- SIR878BDP-T1-E3
- SIR882ADP-T1-E3
- SIR882ADPT1GE3
- SIR878ADP-T1-GE3
- SIR882ADP-T1-GE3
- SIR878ADPT1GE3
- SIR878ADP-T1-G3
- SIR878ADP-T1-E3
- SIR882ADP-T1-RE3
- SIR878ADP
- SIR882BDP-T1-E3
- SIR876DP-T1-GE3
- SIR882BDP-T1-GE3
- SIR876DPT1GE3
- SIR882BDP-T1-RE3
- SIR876DP-T1-E3
- SIR882DP-T1-E3
- SIR876DP
- SIR882DPT1GE3
- SIR876BDP-T1-RE3
- SIR882DP-T1-GE3
- SIR876BDP-T1-GE3
- SIR886-T1-GE3
- SIR876BDP-T1-E3
- SIR888DP
- SIR876ADP-T1-GE3IC
- SIR888DP-T1-E3
- SIR876ADP-T1-GE3
- SIR888DP-T1-GE
- SIR876ADPT1GE3
- SIR888DPT1GE3
- SIR876ADP-T1-E3
- SIR888DP-T1-GE3
- SIR876ADP-GE3
- SIR890DP
- SIR876ADP
- SIR890DP1-E3
- SIR874DP-T1-GE3
- SIR890DP1-GE3