丝印：SIR；Package：SOT-23；TLV702 300-mA, Low-IQ, Low-Dropout Regulator

1 Features 1• Very Low Dropout: – 37 mV at IOUT = 50 mA, VOUT = 2.8 V – 75 mV at IOUT = 100 mA, VOUT = 2.8 V – 220mV at IOUT = 300 mA, VOUT = 2.8 V • 2% Accuracy • Low IQ: 35 μA • Fixed-Output Voltage Combinations Possible from 1.2 V to 4.8 V • High PSRR: 68 dB at 1 kHz • Stable With

文件：892.66 Kbytes 页数：37 Pages

TI

德州仪器

丝印：SIR；Package：SOT-23；TLV702 300-mA, Low-IQ, Low-Dropout Regulator

1 Features 1• Very Low Dropout: – 37 mV at IOUT = 50 mA, VOUT = 2.8 V – 75 mV at IOUT = 100 mA, VOUT = 2.8 V – 220mV at IOUT = 300 mA, VOUT = 2.8 V • 2% Accuracy • Low IQ: 35 μA • Fixed-Output Voltage Combinations Possible from 1.2 V to 4.8 V • High PSRR: 68 dB at 1 kHz • Stable With

文件：892.66 Kbytes 页数：37 Pages

TI

德州仪器

丝印：SIR；Package：SOT-23(DBV)；TLV702 300-mA, Low-IQ, Low-Dropout Regulator

1 Features 1• Very Low Dropout: – 37 mV at IOUT = 50 mA, VOUT = 2.8 V – 75 mV at IOUT = 100 mA, VOUT = 2.8 V – 220mV at IOUT = 300 mA, VOUT = 2.8 V • 2% Accuracy • Low IQ: 35 μA • Fixed-Output Voltage Combinations Possible from 1.2 V to 4.8 V • High PSRR: 68 dB at 1 kHz • Stable With

文件：902.83 Kbytes 页数：37 Pages

TI

德州仪器

丝印：SIR；Package：SOT-23(DBV)；TLV702 300-mA, Low-IQ, Low-Dropout Regulator

1 Features 1• Very Low Dropout: – 37 mV at IOUT = 50 mA, VOUT = 2.8 V – 75 mV at IOUT = 100 mA, VOUT = 2.8 V – 220mV at IOUT = 300 mA, VOUT = 2.8 V • 2% Accuracy • Low IQ: 35 μA • Fixed-Output Voltage Combinations Possible from 1.2 V to 4.8 V • High PSRR: 68 dB at 1 kHz • Stable With

文件：902.83 Kbytes 页数：37 Pages

TI

德州仪器

丝印：SIR；Package：SOT-23；TLV702 300-mA, Low-IQ, Low-Dropout Regulator

1 Features 1• Very Low Dropout: – 37 mV at IOUT = 50 mA, VOUT = 2.8 V – 75 mV at IOUT = 100 mA, VOUT = 2.8 V – 220mV at IOUT = 300 mA, VOUT = 2.8 V • 2% Accuracy • Low IQ: 35 μA • Fixed-Output Voltage Combinations Possible from 1.2 V to 4.8 V • High PSRR: 68 dB at 1 kHz • Stable With

文件：892.66 Kbytes 页数：37 Pages

TI

德州仪器

丝印：SIR；Package：SOT-23；TLV702 300-mA, Low-IQ, Low-Dropout Regulator

1 Features 1• Very Low Dropout: – 37 mV at IOUT = 50 mA, VOUT = 2.8 V – 75 mV at IOUT = 100 mA, VOUT = 2.8 V – 220mV at IOUT = 300 mA, VOUT = 2.8 V • 2% Accuracy • Low IQ: 35 μA • Fixed-Output Voltage Combinations Possible from 1.2 V to 4.8 V • High PSRR: 68 dB at 1 kHz • Stable With

文件：892.66 Kbytes 页数：37 Pages

TI

德州仪器

丝印：SIR；Package：SOT-23(DBV)；TLV702 300-mA, Low-IQ, Low-Dropout Regulator

1 Features 1• Very Low Dropout: – 37 mV at IOUT = 50 mA, VOUT = 2.8 V – 75 mV at IOUT = 100 mA, VOUT = 2.8 V – 220mV at IOUT = 300 mA, VOUT = 2.8 V • 2% Accuracy • Low IQ: 35 μA • Fixed-Output Voltage Combinations Possible from 1.2 V to 4.8 V • High PSRR: 68 dB at 1 kHz • Stable With

文件：902.83 Kbytes 页数：37 Pages

TI

德州仪器

N-Channel 100 V (D-S) MOSFET

FEATURES • TrenchFET® Gen IV power MOSFET • Very low RDS x Qg figure-of-merit (FOM) • Tuned for the lowest RDS x Qoss FOM • 100 Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Synchronous rectification • Prim

文件：221.2 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世威世科技公司

N-Channel 40 V (D-S) MOSFET

FEATURES • TrenchFET® Gen IV power MOSFET • 100 Rg and UIS tested • Qgd/Qgs ratio

文件：390.98 Kbytes 页数：13 Pages

VishayVishay Siliconix

威世威世科技公司

N-Channel 80 V (D-S) MOSFET

FEATURES • TrenchFET® Gen IV power MOSFET • Very low RDS x Qg figure-of-merit (FOM) • Tuned for the lowest RDS x Qoss FOM • 100 Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Synchronous rectification • Prim

文件：180.07 Kbytes 页数：7 Pages

VishayVishay Siliconix

威世威世科技公司