Dual-band 850/900/1800/1900MHz

General features •Dual-band 850/900/1800/1900MHz •GPRS multi-slot class 12/10 •GPRS mobile station class B •Compliant to GSM phase 2/2+ –Class 4 (2 W @850/900MHz) –Class 1 (1 W @1800/1900MHz) •Dimensions: 24*24*3mm •Weight: 3.1g •Control via AT commands (3GPP TS 27.007, 27.005 and SIMCom

文件：142.89 Kbytes 页数：1 Pages

SIMCOM

芯讯通

Dual-band 850/900/1800/1900MHz

文件：137.63 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

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2G

主要特性\n•四频850/900/1800/1900MHz\n•GPRS multi-slot class 12/10\n•GPRS mobile station class B\n•满足GSM 2/2+ 标准\n– Class 4 (2W @850/900MHz)\n– Class 1 (1W @1800/1900MHz)\n•尺寸： 24*24*3mm\n•重量： 3.1g\n•通过AT命令控制 （ 3GPP TS 27.007, 27.005 和\nSIMCOM 增强AT命令集）\n•SIM应用工具包\n•供应电压范围： 3.4 ~ 4.4V\n•低功耗\n•操作温度范围： -40℃ ~;

SIMCom

芯讯通

ULTRAFAST SWITCHING RECTIFIER

VOLTAGE 50 to 600 Volts CURRENT 8.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency.

文件：71.31 Kbytes 页数：2 Pages

PANJIT

強茂

ISOLATION ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 8.0 Amperes)

VOLTAGE 50 to 600 Volts CURRENT 8.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency.

文件：74.47 Kbytes 页数：2 Pages

PANJIT

強茂

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The µPA800T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V,

文件：51.21 Kbytes 页数：6 Pages

NEC

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