IGBT Module

SALLTECH

萨瑞微电子

Integrated 3 Phase Gate Driver Chip product

1.1 Features  Thin-film-SOI-technology  Insensitivity of the bridge output to negative transient voltages up to -50V given by SOI-technology  Maximum blocking voltage +600V  Power supply of the high side drivers via boot strap  Integrated bootstrap functionality  Separate control circ

文件：539.97 Kbytes 页数：17 Pages

Infineon

英飞凌

TRENCHSTOPTM Reverse Conducting (RC) technology

IGBT chip with monolithically integrated diode in packages offering space saving advantage Features: TRENCHSTOPTM Reverse Conducting (RC) technology for 600V applications offering: • Optimised VCEsat and VF for low conduction losses • Smooth switching performance leading to low EMI levels •

文件：102.2 Kbytes 页数：6 Pages

Infineon

英飞凌

IGBT with integrated diode in packages offering space saving advantage

文件：1.90634 Mbytes 页数：16 Pages

Infineon

英飞凌