首页 >SIHW23N60E>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

SIHW23N60E

E Series Power MOSFET

VishayVishay Siliconix

威世科技威世科技半导体

FMH23N60E

N-CHANNELSILICONPOWERMOSFET

FujiFUJI CORPORATION

株式会社FUJI

FMH23N60ES

N-CHANNELSILICONPOWERMOSFET

FujiFUJI CORPORATION

株式会社FUJI

FMR23N60E

N-CHANNELSILICONPOWERMOSFET

FujiFUJI CORPORATION

株式会社FUJI

FMR23N60E

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FMR23N60ES

N-CHANNELSILICONPOWERMOSFET

FujiFUJI CORPORATION

株式会社FUJI

G23N60UF

Ultra-FastIGBT

GeneralDescription FairchildsInsulatedGateBipolarTransistor(IGBT)UFDseriesprovideslowconductionandswitchinglosses.UFDseriesisdesignedfortheapplicationssuchasmotorcontrolandgeneralinverterswhereHighSpeedSwitchingisrequired. Features •HighSpeedSwitching •Low

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

G23N60UFD

Ultra-FastIGBT

GeneralDescription FairchildsInsulatedGateBipolarTransistor(IGBT)UFDseriesprovideslowconductionandswitchinglosses.UFDseriesisdesignedfortheapplicationssuchasmotorcontrolandgeneralinverterswhereHighSpeedSwitchingisrequired. Features •HighSpeedSwitching •Low

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IXFH23N60Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=23A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.32Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFH23N60Q

HiPerFETPowerMOSFETsQ-Class

IXYS

IXYS Integrated Circuits Division

IXFT23N60Q

HiPerFETPowerMOSFETsQ-Class

IXYS

IXYS Integrated Circuits Division

IXTQ23N60Q

PowerMOSFETsQ-Class

IXYS

IXYS Integrated Circuits Division

IXTQ23N60Q

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SFF23N60M

AvalancheRatedN-channelMOSFET

SSDI

SSDI

SFF23N60Z

AvalancheRatedN-channelMOSFET

SSDI

SSDI

SGF23N60UF

Ultra-FastIGBT

GeneralDescription FairchildsInsulatedGateBipolarTransistor(IGBT)UFseriesprovideslowconductionandswitchinglosses. UFseriesisdesignedfortheapplicationssuchasmotorcontrolandgeneralinverterswhereHighSpeedSwitchingisrequired. Features •HighSpeedSwitching •LowS

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SGF23N60UFD

Ultra-FastIGBT

GeneralDescription FairchildsInsulatedGateBipolarTransistor(IGBT)UFDseriesprovideslowconductionandswitchinglosses.UFDseriesisdesignedfortheapplicationssuchasmotorcontrolandgeneralinverterswhereHighSpeedSwitchingisrequired. Features •HighSpeedSwitching •Low

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SGF23N60UFDTU

TO-3PFTubePackingData

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SGF23N60UFTU

600VPTIGBT

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SGH23N60UF

N-CHANNELIGBT

FEATURES *HighSpeedSwitching *LowSaturationVoltage:VCE(sat)=1.95V(@Ic=12A) *HighInputImpedance APPLICATIONS *AC&DCMotorcontrols *GeneralPurposeInverters *Robotics,ServoControls *PowerSupply *LampBallast

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

详细参数

  • 型号:

    SIHW23N60E

  • 功能描述:

    MOSFET 600V 158mOhm@10V 23A N-Ch E-SRS

  • RoHS:

  • 制造商:

    Vishay/Siliconix

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    20 V

  • 漏极连续电流:

    23 A 电阻汲极/源极

  • RDS(导通):

    0.158 Ohms

  • 配置:

    Single

  • 最大工作温度:

    + 150 C

  • 安装风格:

    Through Hole

  • 封装/箱体:

    TO-247AD-3

  • 封装:

    Bulk

供应商型号品牌批号封装库存备注价格
VISHY
1419
TO247
15000
普通
询价
VISHAY
1503+
TO-247
3000
就找我吧!--邀您体验愉快问购元件!
询价
Vishay Siliconix
22+
TO2473
9000
原厂渠道,现货配单
询价
Vishay Siliconix
2022+
TO-247-3
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
VISHAY-威世
24+25+/26+27+
TO-247-3
9328
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
Vishay Siliconix
23+
SMD
67536
原装正品实单可谈 库存现货
询价
VISHAY/威世
TO-247
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
VISHAY/威世
2023+
SMD
8635
一级代理优势现货,全新正品直营店
询价
VISHAY/威世
2022+
TO-247
30000
进口原装现货供应,原装 假一罚十
询价
VISHAY
2020+
TO-247
9600
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
更多SIHW23N60E供应商 更新时间2024-6-21 10:12:00