首页 >SIHP28N65EF>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
SIHP28N65EF | E Series Power MOSFET with Fast Body Diode FEATURES •FastbodydiodeMOSFETusingEseries technology •Reducedtrr,Qrr,andIRRM •Lowfigure-of-merit(FOM):RonxQg •Lowinputcapacitance(Ciss) •LowswitchinglossesduetoreducedQrr •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) •Materialcategorization:fo | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | |
SIHP28N65EF | EF Series Power MOSFET with Fast Body Diode | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | |
SIHP28N65EF | iscN-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
E Series Power MOSFET with Fast Body Diode FEATURES •FastbodydiodeMOSFETusingEseries technology •Reducedtrr,Qrr,andIRRM •Lowfigure-of-merit(FOM):RonxQg •Lowinputcapacitance(Ciss) •LowswitchinglossesduetoreducedQrr •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) •Materialcategorization:fo | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
N-ChannelSuperJunctionPowerMOSFET? | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
N-ChannelSuperJunctionPowerMOSFET? | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
N-ChannelSuperJunctionPowerMOSFET? | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
N-ChannelSuperJunctionPowerMOSFET? | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
ESeriesPowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS • | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
ESeriesPowerMOSFETwithFastBodyDiode FEATURES •FastbodydiodeMOSFETusingEseries technology •Reducedtrr,Qrr,andIRRM •Lowfigure-of-merit(FOM):RonxQg •Lowinputcapacitance(Ciss) •LowswitchinglossesduetoreducedQrr •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) •Materialcategorization:fo | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
EFSeriesPowerMOSFETwithFastBodyDiode | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
ESeriesPowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS • | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
MOSFETsSiliconN-ChannelMOS Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.094Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=1.6mA) | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
isc |
2024 |
TO-220 |
1000 |
国产品牌isc,可替代原装 |
询价 | ||
VISHAY-威世 |
24+25+/26+27+ |
TO-220-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
VISHAY/威世 |
2021+ |
TO-220AB |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
VISHAY |
20+ |
TO-220 |
326 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
Vishay Siliconix |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
询价 | ||
Vishay Siliconix |
2022+ |
TO-220-3 |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
Vishay Siliconix |
23+ |
SMD |
67000 |
原装正品实单可谈 库存现货 |
询价 | ||
VISHAY/威世 |
TO-220AB-3 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | |||
VISHAY/威世 |
2022+ |
TO-220 |
79999 |
询价 | |||
VISHAY/威世 |
2023+ |
SMD |
8635 |
一级代理优势现货,全新正品直营店 |
询价 |
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