EF Series Power MOSFET With Fast Body Diodes

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Co(er)) • Reduced switching and conduction losses • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Server and telecom power

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VISHAYVishay Siliconix

威世威世科技公司

N-Channel Super Junction MOSFET

文件：595.92 Kbytes 页数：3 Pages

HMSEMI

华之美半导体

HiPerFET ISOPLUS 220 MOSFET Q-Class Electrically Isolated Back Surface

文件：517.57 Kbytes 页数：2 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 13A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.65Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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ISC

无锡固电