EF Series Power MOSFET With Fast Body Diode

• Low figure-of-merit (FOM) Ron x Qg\n• Low effective capacitance (Ciss)\n• Reduced switching and conduction losses\n\n\nAPPLICATIONS• Server and telecom power supplies\n• Switch mode power supplies (SMPS)\n• Power factor correction power supplies (PFC);

Vishay

威世

E Series Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS •

文件：148.39 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

iscN-Channel MOSFET Transistor

文件：329.32 Kbytes 页数：2 Pages

ISC

无锡固电

11A, 812V N-CHANNEL POWER MOSFET

文件：165.26 Kbytes 页数：4 Pages

UTC

友顺

800V N-Channel MOSFET

文件：266.71 Kbytes 页数：10 Pages

SEMIHOW

HiPerFET Power MOSFETs

HiPerFET Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive

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IXYS

艾赛斯