EF Series Power MOSFET With Fast Body Diode

FEATURES • 4th generation E series technology • Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Co(er)) • Reduced switching and conduction losses • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 AP

文件：156.85 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

EF Series Power MOSFET With Fast Body Diode

Vishay

威世

N-Ch Enhancement Mode Power MOSFET

文件：443.7 Kbytes 页数：4 Pages

SECOS

喜可士

600V N-Channel Super Junction MOSFET

Feature:  RDS(ON) Max, VGS@10V: 105mΩ  Fast recovery Qrr/Trr performance  High Speed Switching and Low RDS(ON)  100 Avalanche Tested  100 Rg Tested  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Application  Suitable for LLC / PSFB /

文件：899.41 Kbytes 页数：7 Pages

PANJIT

強茂

600V N-Channel Super Junction MOSFET

Feature:  RDS(ON) Max, VGS@10V: 105mΩ  Fast recovery Qrr/Trr performance  High Speed Switching and Low RDS(ON)  100 Avalanche Tested  100 Rg Tested  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Application  Suitable for LLC / PSFB /

文件：892.54 Kbytes 页数：7 Pages

PANJIT

強茂

EF Series Power MOSFET With Fast Body Diode

文件：166.76 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司