SIHL630-E3数据表ic资料供应商报价威世-114ic电子网

首页 >SIHL630-E3>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
SIHL630-E3	文件：1.92247 Mbytes Page：8 Pages	Power MOSFET VDS (V) 200 V RDS(on) (Ω) VGS = 5 V 0.40 Qg (Max.) (nC) 40 Qgs (nC) 5.5 Qgd (nC) 24 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectivenes 文件：1.92247 Mbytes 页数：8 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
SIHL630-E3	文件：300 bytes Page：1 Pages	Power MOSFET	Vishay 威世	Vishay
SIHF630-E3	文件：5.97495 Mbytes Page：8 Pages	Power MOSFET Dynamic dV/dt Rating Repetitive Avalanche Rated DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati 文件：5.97495 Mbytes 页数：8 Pages	KERSEMI	KERSEMI
SIHF630-E3	文件：579.72 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati 文件：579.72 Kbytes 页数：8 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY

更多SIHL630-E3供应商更新时间2026-1-27 14:14:00