SIHL520-E3中文资料威世科技数据手册PDF规格书

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Logic-Level Gate Drive

• RDS(on) Specified at VGS = 4 V and 5 V

• 175 °C Operating Temperature

• Fast Switching

• Ease of Paralleling

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-220AB package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost the TO-220AB contribute to its wide

acceptance throughout the industry.