Power MOSFET

DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total system savings. I

文件：203.55 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

Vishay

威世

N-Channel 650 V (D-S) MOSFET

FEATURES • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Telecommunications - Server and telecom power supplies • Light

文件：1.03823 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provi

文件：174.47 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet

文件：199.04 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司