Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

文件：135.63 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：276.83 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

Vishay

威世

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Switch Mode Power

文件：158.11 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Switch Mode Power

文件：158.11 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive    Requirement • Improved Gate, Avalanche and Dynamic dV/dt    Ruggedness • Fully Characterized Capacitance and    Avalanche Voltage and Current • Effective Coss specified (AN 1001) • Lead (Pb)-free Available APPLICATIONS • Switch Mod

文件：171.32 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Low gate charge Qg results in cimple drive requirement • Improved gate, avalanche, and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance please see www

文件：238.34 Kbytes 页数：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive    Requirement • Improved Gate, Avalanche and Dynamic dV/dt    Ruggedness • Fully Characterized Capacitance and    Avalanche Voltage and Current • Effective Coss specified (AN 1001) • Lead (Pb)-free Available APPLICATIONS • Switch Mod

文件：171.32 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Low gate charge Qg results in cimple drive requirement • Improved gate, avalanche, and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance please see www

文件：238.34 Kbytes 页数：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive    Requirement • Improved Gate, Avalanche and Dynamic dV/dt    Ruggedness • Fully Characterized Capacitance and    Avalanche Voltage and Current • Effective Coss specified (AN 1001) • Lead (Pb)-free Available APPLICATIONS • Switch Mod

文件：171.32 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司