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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
SIHF35N60EF	文件：155.27 Kbytes Page：10 Pages	EF Series Power MOSFET With Fast Body Diode FEATURES •Aspecificonresistance(mΩ-cm2)reductionof 25 •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) •Materialcategorization:fordefinitionsofcompliance	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
35N60A	文件：851.66 Kbytes Page：5 Pages	35A600VN-channelenhancedfieldeffecttransistor	YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司	YFWDIODE
DAM35N60F	文件：260.05 Kbytes Page：4 Pages	N-ChannelEnhancementModeMOSFET	DACO DACO	DACO
DAM35N60H	文件：243.21 Kbytes Page：4 Pages	N-ChannelEnhancementModeMOSFET	DACO DACO	DACO
FCA35N60	文件：347.93 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=35A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=79mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FCA35N60	文件：298.83 Kbytes Page：14 Pages	DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FCA35N60	文件：770.04 Kbytes Page：8 Pages	600VN-ChannelMOSFET Description SuperFET™isFarichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance. Features •650V@TJ=150°C •Typ.RDS(on)=0.079Ω •Ultralow	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FCH35N60	文件：436.01 Kbytes Page：8 Pages	N-ChannelSuperFET짰MOSFET Description SuperFET®MOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thistechnologyistailoredtominimizeconductionloss,	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FCH35N60	文件：298.83 Kbytes Page：14 Pages	DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FGW35N60H	文件：635.16 Kbytes Page：6 Pages	DiscreteIGBT(High-SpeedVseries)600V/35A Features Lowpowerloss Lowswitchingsurgeandnoise Highreliability,highruggedness(RBSOA,SCSOAetc.) Applications Uninterruptiblepowersupply Powercoditionner Powerfactorcorrectioncircuit	FujiFUJI CORPORATION 株式会社ＦＵＪＩ	Fuji
FGW35N60HD	文件：640.08 Kbytes Page：8 Pages	DiscreteIGBT(High-SpeedVseries)600V/35A 600V/35A Features Lowpowerloss Lowswitchingsurgeandnoise Highreliability,highruggedness(RBSOA,SCSOAetc.) Applications Uninterruptiblepowersupply Powercoditionner Powerfactorcorrectioncircuit	FujiFUJI CORPORATION 株式会社ＦＵＪＩ	Fuji
ICE35N60W	文件：964.41 Kbytes Page：4 Pages	N-ChannelEnhancementModeMOSFET	MICROSS MICROSS	MICROSS
ICE35N60W	文件：589.87 Kbytes Page：8 Pages	N-ChannelEnhancementModeMOSFET	ICEMOSIcemos Technology Icemos 技术	ICEMOS
ISPW35N60CFD	文件：335.61 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤118mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXDH35N60B	文件：101.3 Kbytes Page：4 Pages	IGBTwithoptionalDiode HighSpeed,LowSaturationVoltage Features ●NPTIGBTtechnology ●lowswitchinglosses ●lowtailcurrent ●nolatchup ●shortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●MOSinput,voltagecontrolled ●optionalultrafastdiode ●Internationalstandard	IXYS IXYS Integrated Circuits Division	IXYS
IXDP35N60B	文件：101.3 Kbytes Page：4 Pages	IGBTwithoptionalDiode HighSpeed,LowSaturationVoltage Features ●NPTIGBTtechnology ●lowswitchinglosses ●lowtailcurrent ●nolatchup ●shortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●MOSinput,voltagecontrolled ●optionalultrafastdiode ●Internationalstandard	IXYS IXYS Integrated Circuits Division	IXYS
SIHB35N60E	文件：162.62 Kbytes Page：7 Pages	ESeriesPowerMOSFET	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
SIHB35N60E	文件：215.86 Kbytes Page：9 Pages	ESeriesPowerMOSFET	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
SIHB35N60EF	文件：192.22 Kbytes Page：10 Pages	EFSeriesPowerMOSFETWithFastBodyDiode	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
SIHF35N60E	文件：183.32 Kbytes Page：9 Pages	ESeriesPowerMOSFET FEATURES •Aspecificonresistance(m-cm2)reductionof 25 •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) •Materialcategorization:fordefinitionsofcompliance	VishayVishay Siliconix 威世科技威世科技半导体	Vishay

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市鹏顺微电子科技有限公司	SIHF35N60EF-GE3	Vishay Siliconix	2022+	TO-220-3 整包	38550	全新原装支持表配单中国著名电子元器件独立分销	询价
深圳市惊羽科技有限公司	SIHF35N60EF-GE3	VISHAY-威世	24+25+/26+27+	TO-220-3	6328	一一有问必回一特殊渠道一有长期订货一备货HK仓库	询价
深圳宝隆芯业科技有限公司	SIHF35N60EF-GE3	Vishay Siliconix	23+	SMD	67000	原装正品实单可谈库存现货	询价
深圳市河锋鑫科技有限公司	SIHF35N60EGE3	Vishay Siliconix	22+	TO2203	9000	原厂渠道,现货配单	询价
深圳市科雨电子有限公司	SIHF35N60E-GE3	VISHAY	1809+	TO-220	375	就找我吧!--邀您体验愉快问购元件!	询价
齐创科技(上海,北京,青岛)有限公司	SIHF510	VIS	23+	TO-220	10000	原装正品,假一罚十	询价
深圳兆威电子有限公司	SIHF510	VB	2019	TO-220	55000	绝对原装正品假一罚十!	询价
深圳市新力诚科技有限公司	SiHF510	Vishay	2020+	TO-220	52170	公司代理品牌,原装现货超低价清仓!	询价
深圳市纳艾斯科技有限公司	SIHF510	V	2020+	TO-220	80000	只做自己库存,全新原装进口正品假一赔百,可开13%增	询价
深圳市保之丰科技有限公司	SIHF510	V	21+	TO-220	20023		询价

更多SIHF35N60EF供应商更新时间2024-6-14 15:00:00

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