EF Series Power MOSFET With Fast Body Diode

FEATURES • A specific on resistance (mΩ-cm2) reduction of 25 • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance

文件：155.27 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

EF Series Power MOSFET With Fast Body Diode

A specific on resistance (mΩ-cm2) reduction of 25 %\n Low figure-of-merit (FOM) Ron x Qg\n Low input capacitance (Ciss)\n\n ;

Vishay

威世

E Series Power MOSFET

文件：154.48 Kbytes 页数：7 Pages

VISHAYVishay Siliconix

威世威世科技公司

iscN-Channel MOSFET Transistor

文件：445.56 Kbytes 页数：2 Pages

ISC

无锡固电

EF Series Power MOSFET With Fast Body Diode

文件：192.33 Kbytes 页数：11 Pages

VISHAYVishay Siliconix

威世威世科技公司