isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4.2A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.45Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：304.85 Kbytes 页数：2 Pages

ISC

无锡固电

E Series Power MOSFET

文件：202.58 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世威世科技公司

E Series Power MOSFET

文件：202.58 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世威世科技公司

E Series Power MOSFET

4th generation E series technology\n Low figure-of-merit (FOM) Ron x Qg\n Low effective capacitance (Co(er))\n\n ;

Vishay

威世