首页 >SIHB21N60EF>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
SIHB21N60EF | EF Series Power MOSFET with Fast Body Diode | VishayVishay Siliconix 威世科技 | Vishay | |
SIHB21N60EF | iscN-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
SIHB21N60EF | EF Series Power MOSFET with Fast Body Diode | VishayVishay Siliconix 威世科技 | Vishay | |
EF Series Power MOSFET with Fast Body Diode | VishayVishay Siliconix 威世科技 | Vishay | ||
EF Series Power MOSFET with Fast Body Diode | VishayVishay Siliconix 威世科技 | Vishay | ||
FastSwitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelSuperJunctionPowerMOSFETII | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
N-ChannelSuperJunctionPowerMOSFETII | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
PowerMOSFET FEATURES •Superfastbodydiodeeliminatestheneedfor externaldiodesinZVSapplications •Lowergatechargeresultsinsimpledrive requirement •EnhanceddV/dtcapabilitiesofferimprovedruggedness •Highergatevoltagethresholdoffersimprovednoise immunity •Materialcategorizati | VishayVishay Siliconix 威世科技 | Vishay | ||
iscN-ChannelMOSFETTransistor •DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=0.32Ω(MAX) •Enhancementmode: Vth=3.0to5.0V(VDS=10V,ID=0.25mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SMPSMOSFET FEATURES •SuperfastbodydiodeeliminatestheneedforexternaldiodesinZVSapplications. •LowerGatechargeresultsinsimpledriverequirements. •EnhanceddV/dtcapabilitiesofferimprovedruggedness. •HigherGatevoltagethresholdoffersimprovednoiseimmunity. APPLICATIONS •Zero | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET PowerMOSFET FEATURES •SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications •LowerGateChargeResultsinSimpleDriveRequirements •EnhanceddV/dtCapabilitiesOfferImprovedRuggedness •HigherGateVoltageThresholdOffersImprovedNoiseImmunity •Lead(Pb) | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET PowerMOSFET FEATURES •SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications •LowerGateChargeResultsinSimpleDriveRequirements •EnhanceddV/dtCapabilitiesOfferImprovedRuggedness •HigherGateVoltageThresholdOffersImprovedNoiseImmunity •Lead(Pb) | VishayVishay Siliconix 威世科技 | Vishay | ||
SMPSMOSFET FEATURES •SuperfastbodydiodeeliminatestheneedforexternaldiodesinZVSapplications. •LowerGatechargeresultsinsimpledriverequirements. •EnhanceddV/dtcapabilitiesofferimprovedruggedness. •HigherGatevoltagethresholdoffersimprovednoiseimmunity. APPLICATIONS •Zero | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
SMPSMOSFET | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Integrated Circuits Division | IXYS | ||
HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Integrated Circuits Division | IXYS | ||
HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Integrated Circuits Division | IXYS | ||
InsulatedGateBipolarTransistor InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplications | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
InsulatedGateBipolarTransistor InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplications | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
23+ |
N/A |
90250 |
正品授权货源可靠 |
询价 | |||
VISHAY |
23+ |
TO-263 |
33500 |
全新原装真实库存含13点增值税票! |
询价 | ||
VISHAY/威世 |
23+ |
TO-263 |
10000 |
公司只做原装正品 |
询价 | ||
VISHAY/威世 |
22+ |
TO-263 |
6000 |
十年配单,只做原装 |
询价 | ||
isc |
2024 |
D2PAK/TO-263 |
3000 |
国产品牌isc,可替代原装 |
询价 | ||
VISHAY/威世 |
22+ |
TO-263 |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
VISHAY-威世 |
24+25+/26+27+ |
TO-263-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
VISHAY/威世 |
2102+ |
TO263 |
6854 |
只做原厂原装正品假一赔十! |
询价 | ||
VISHAY |
20+ |
TO-263 |
1675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
Vishay Siliconix |
21+ |
SOT-563,SOT-666 |
12909 |
专业分立半导体,原装渠道正品现货 |
询价 |
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