EF Series Power MOSFET With Fast Body Diode

FEATURES • 4th generation E series technology • Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Co(er)) • Reduced switching and conduction losses • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 AP

文件：196.83 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

EF Series Power MOSFET With Fast Body Diode

• 4th generation E series technology\n• Low figure-of-merit (FOM) Ron x Qg\n• Low effective capacitance (Co(er))\n\n\nAPPLICATIONS• Server and telecom power supplies\n• Switch mode power supplies (SMPS)\n• Power factor correction power supplies (PFC);

Vishay

威世

E Series Power MOSFET

FEATURES • 4th generation E series technology • Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Co(er)) • Reduced switching and conduction losses • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 AP

文件：177.33 Kbytes 页数：7 Pages

VISHAYVishay Siliconix

威世威世科技公司

EF Series Power MOSFET With Fast Body Diode

FEATURES • 4th generation E series technology • Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Co(er)) • Reduced switching and conduction losses • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 AP

文件：178.8 Kbytes 页数：7 Pages

VISHAYVishay Siliconix

威世威世科技公司