E Series Power MOSFET with Fast Body Diode

FEATURES • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for

文件：180.35 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

E Series Power MOSFET with Fast Body Diode

文件：177.42 Kbytes 页数：7 Pages

VISHAYVishay Siliconix

威世威世科技公司

iscN-Channel MOSFET Transistor

文件：319.52 Kbytes 页数：2 Pages

ISC

无锡固电

E Series Power MOSFET with Fast Body Diode

FEATURES • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for

文件：180.35 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

E Series Power MOSFET with Fast Body Diode

FEATURES • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for

文件：180.35 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

E Series Power MOSFET with Fast Body Diode

FEATURES • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for

文件：180.35 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

E Series Power MOSFET with Fast Body Diode

·Fast body diode MOSFET using E series technology\n·Reduced trr, Qrr, and IRRM\n·Low figure-of-merit (FOM) Ron x Qg;

Vishay

威世