EF Series Power MOSFET With Fast Body Diode

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Co(er)) • Reduced switching and conduction losses • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Server and telecom power

文件：159.23 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=2.7A@ TC=25℃ ·Drain Source Voltage -VDSS= 250V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.0Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：294.76 Kbytes 页数：2 Pages

ISC

无锡固电

E Series Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Co(er)) • Reduced switching and conduction losses • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Server and telecom power

文件：200.49 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

E Series Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Co(er)) • Reduced switching and conduction losses • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Server and telecom power

文件：202.67 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司