SIGC15T60SE

600V trench & field stop technology

SIGC15T60SEX7SA1

Package：模具；包装：散装 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 3 CHIP 600V

G15T60

LowLossIGBT:IGBTinTRENCHSTOP??andFieldstoptechnology

K15T60

LowLossDuoPack:IGBTinTrenchStopandFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmConHEdiode

Features: •VerylowVCE(sat)1.5V(typ.) •MaximumJunctionTemperature175°C •Shortcircuitwithstandtime5s •TRENCHSTOP™andFieldstoptechnologyfor600Vapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -veryhigh

NCE15T60BD

600V,15A,TrenchFSIIFastIGBT

GeneralDescription: UsingNCE'sproprietarytrenchdesignandadvancedFS(FieldStop)second generationtechnology,the600VTrenchFSIIIGBTofferssuperiorconductionand switchingperformances,andeasyparalleloperation; Features TrenchFSIITechnologyoffering ⚫VerylowVCE（sat）

SIGC15T60

IGBT3Chip

SIGC15T60E

TRENCHSTOPTMIGBT3Chip

Features: 600Vtrench&fieldstoptechnology LowVCEsat Lowturn-offlosses Shorttailcurrent Positivetemperaturecoefficient Easyparalleling

SIGC15T60S

IGBT3Chip600VTrench&FieldStoptechnologypositivetemperaturecoefficient

SIGC15T60UN

HighSpeedIGBTChipinNPT-technologypositivetemperaturecoefficient